AON1606 20v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 0.7a r ds(on) (at v gs =4.5v) < 275m w r ds(on) (at v gs =2.5v) < 335m w r ds(on) (at v gs =1.8v) < 390m w typical esd protection hbm class 1c the AON1606 utilize advanced trench mosfet technology in small dfn 1.0 x 0.6 package. this dev ice is ideal for load switch applications. absolute maximum ratings t a =25c unless otherwise noted 20v d d dfn 1.0x0.6 top view bottom view s g g d s symbol v ds v gs i dm t j , t stg symbol t 10s steady-state t 10s steady-state maximum junction-to-ambient b r q ja 200 245 c/w maximum junction-to-ambient b 280 340 c/w pulsed drain current c 2.8 a t a =25c c/w maximum junction-to-ambient a 140 thermal characteristics units maximum junction-to-ambient a c/w r q ja 80 110 100 parameter v maximum units parameter drain-source voltage 20 a t a =70c continuous drain current e 0.55 0.7 typ max v 8 gate-source voltage c 0.9 junction and storage temperature range -55 to 150 power dissipation a p d w t a =70c 0.55 t a =25c i d rev 0 : oct. 2012 www.aosmd.com page 1 of 5
AON1606 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.65 1.0 v i d(on) 2.8 a 225 275 t j =125c 313 380 265 335 m w 300 390 m w 355 m w g fs 2 s v sd 0.75 1.2 v i s -0.7 a c iss 62.5 pf c oss 12.5 pf c rss 9 pf r g 5.5 w q g 0.85 nc q gs 0.1 nc q gd 0.25 nc t 2 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v i dss reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters m w on state drain current v gs =4.5v, v ds =5v v gs =4.5v, i d =0.4a m a v ds =v gs , i d =250 m a v ds =0v, v gs =8v r ds(on) static drain-source on-resistance total gate charge zero gate voltage drain current gate-body leakage current v ds =5v, i d =0.4a v gs =1.8v, i d =0.2a forward transconductance v gs =2.5v, i d =0.3a v gs =1.5v, i d =0.1a i s =0.4a,v gs =0v v gs =4.5v, v ds =10v, i d =0.4a gate source charge gate drain charge maximum body-diode continuous current e input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz t d(on) 2 ns t r 4 ns t d(off) 18 ns t f 8 ns this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off fall time turn-off delaytime turn-on rise time turn-on delaytime v gs =4.5v, v ds =10v, r l =25 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it to. b. the value of r q ja is measured with the device mounted on fr-4 minimum pad board, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on th e user's specific board design, and the maximum tempe rature of 150 c may be used if the pcb allows it to. c. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. d. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. e. the maximum current limited by package. rev 0 : oct. 2012 www.aosmd.com page 2 of 5
AON1606 typical electrical and thermal characteristics 17 52 10 0 18 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 100 200 300 400 500 600 0 0.2 0.4 0.6 0.8 1 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =0.4a v gs =2.5v i d =0.3a v gs =1.5v i d =0.1a 25 c 125 c v ds =-5v v gs =1.8v v gs =4.5v 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.0v 1.5v 2v 4.5v v gs =2.5v v gs =1.8v i d =0.2a v gs =1.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 100 200 300 400 500 600 0 2 4 6 8 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =0.4a 25 c 125 c rev 0 : oct. 2012 www.aosmd.com page 3 of 5
AON1606 typical electrical and thermal characteristics 17 52 10 0 18 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 20 40 60 80 100 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 1 2 3 4 5 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note b) c oss c rss v ds =10v i d =0.4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note b) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 40 ambient (note b) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note b) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note b) r q jc =140 c/w rev 0 : oct. 2012 www.aosmd.com page 4 of 5
AON1606 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 0 : oct. 2012 www.aosmd.com page 5 of 5
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